Hynix and Toshiba will develop MRAM memory - Cell phones

Hynix and Toshiba will develop MRAM memory - Cell phonesToshiba and Hynix will jointly develop technology for the production of magnetoresistive memory with random access (MRAM). The MRAM memory that stores information by using magnetic moments, combines the advantages of dynamic and flash memory. Chip MRAM have a small access time and yet are non-volatile, meaning they can store data without power. In addition, unlike flash memory, the characteristics of the MRAM not deteriorate during operation. It is reported that Hynix and Toshiba will concentrate efforts on technology switching using spin transfer (Spin-Transfer Torque, STT). This method is designed to solve the problems of "classical" technology MRAM will be faced with increasing density of memory cells and improving the current account. Thanks to its versatility memory MRAM is expected to find application in a wide variety of devices - from smartphones and personal computers to home appliances. Commencement of mass production of MRAM chip company Hynix and Toshiba do not require it. Prepared according to Toshiba..



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